Fail-safe for shared pin

ABSTRACT

An integrated circuit (IC) provides an improved fail-safe signal to a circuit sharing a fail-safe pin at which the voltage can be greater than the voltage of an upper rail. The IC includes a first circuit segment that receives a first fail-safe signal and a first power-down signal and provides an intermediate signal, wherein the first fail-safe signal indicates when the voltage at the fail-safe pin is greater than the upper rail and the first power-down signal indicates when the module is powered down, and a second circuit segment connected to receive the intermediate signal and to provide the improved fail-safe signal to the module.

This application is a continuation of U.S. patent application Ser. No. 15/087,089, filed Mar. 31, 2016, currently pending, which is hereby incorporated herein by its entirety.

FIELD OF THE DISCLOSURE

Disclosed embodiments relate generally to the field of fail-safe circuit. More particularly, and not by way of any limitation, the present disclosure is directed to a fail-safe circuit for use with a shared pin.

BACKGROUND

A node or pin in a system is a fail-safe pin when it is possible for the voltage at the pin to be greater than V_(DD), a condition that should be protected against. To manage this problem, a fail-safe circuit generates a fail-safe signal to prevent the flow of current towards V_(DD). When a fail-safe pin is shared by multiple circuit blocks, undesired interactions can occur in certain situations. Applicants have noted that a circuit block that is in power-down mode can still affect settling time in other blocks sharing the same fail-safe pin. It is desirable that a block in power-down mode have no effect on blocks that share a fail-safe pin.

SUMMARY

A module is disclosed that modifies an existing fail-safe signal so that the modified fail-safe signal is asserted both when the voltage at the fail-safe pin is greater than V_(DD) and also when the circuit block that receives the modified signal is in power-down mode. The modified fail-safe signal prevents switching of the fail-safe signal during power-down mode, eliminating the interference with other circuit blocks.

In one aspect, an embodiment of an integrated circuit is disclosed. The integrated circuit includes a first circuit segment that receives a first fail-safe signal and a first power-down signal and provides an intermediate signal, wherein the first fail-safe signal indicates when the voltage at the fail-safe pin is greater than the upper rail and the first power-down signal indicates when the module is powered down; and a second circuit segment connected to receive the intermediate signal and to provide the improved fail-safe signal to the module.

In another aspect, an embodiment of an integrated circuit is disclosed. The an integrated circuit includes a plurality of circuit blocks that share a common pin, wherein a voltage at the common pin can be greater than a voltage of an upper rail; a first circuit block of the plurality of circuit blocks, the first circuit block comprising a PMOS transistor coupled in series between the common pin and the upper rail; and a fail-safe circuit that receives the voltage at the common pin and a power-down signal for the first circuit block and provides a first fail-safe signal that turns off the PMOS transistor whenever the voltage at the common pin is greater than the upper rail and also when the first circuit block is in power-down mode.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present disclosure are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings in which like references indicate similar elements. It should be noted that different references to “an” or “one” embodiment in this disclosure are not necessarily to the same embodiment, and such references may mean at least one. Further, when a particular feature, structure, or characteristic is described in connection with an embodiment, it is submitted that it is within the knowledge of one skilled in the art to effect such feature, structure, or characteristic in connection with other embodiments whether or not explicitly described.

As used herein, the term “couple” or “coupled” is intended to mean either an indirect or direct electrical connection unless qualified as in “communicably coupled” which may include wireless connections. Thus, if a first device couples to a second device, that connection may be through a direct electrical connection, or through an indirect electrical connection via other devices and connections.

The accompanying drawings are incorporated into and form a part of the specification to illustrate one or more exemplary embodiments of the present disclosure. Various advantages and features of the disclosure will be understood from the following Detailed Description taken in connection with the appended claims and with reference to the attached drawing figures in which:

FIG. 1A depicts a circuit for modifying a fail-safe signal to provide an improved fail-safe signal according to an embodiment of the disclosure;

FIG. 1B depicts a circuit for providing a fail-safe signal when the voltage on a given pad is greater than the upper rail according an embodiment of the disclosure;

FIG. 2 depicts a system having multiple blocks that share a fail-safe pin;

FIG. 3A depicts a circuit section that utilizes a fail-safe signal; and

FIG. 3B depicts a circuit section having an improvement to the use of a fail-safe signal.

DETAILED DESCRIPTION OF THE DRAWINGS

Specific embodiments of the invention will now be described in detail with reference to the accompanying figures. In the following detailed description of embodiments of the invention, numerous specific details are set forth in order to provide a more thorough understanding of the invention. However, it will be apparent to one of ordinary skill in the art that the invention may be practiced without these specific details. In other instances, well-known features have not been described in detail to avoid unnecessarily complicating the description.

The following circuits are explained with reference to Complementary Metal Oxide Semiconductor (CMOS) transistors, which include n-type MOS (NMOS) and p-type MOS (PMOS). One skilled in the art will understand that the names (CMOS, PMOS, NMOS) are hold-overs from the days when these transistors were made using metal gates and oxide passivation layers, although other materials can be used instead of these specific materials. Additionally, other types of transistors can also be used, such as junction gate field-effect transistor (JFET), bipolar junction transistors, etc.

Referring first to FIG. 2, the problem encountered in blocks sharing a fail-safe pin is explained in greater detail. System 200, which may for example be a System On Chip (SOC), discloses three IPs: IP-1 202, IP-2 204 and IP-3 206; the three IPs share a Fail-Safe Pin 208 that has a voltage V_(OUT). Herein, an IP refers to an internal circuitry core or block of circuitry within the overall system; only portions of each IP are illustrated for simplicity. Similarly, a pin is a node that provides input or output to an IP. IP1 202 supplies an alternating current (AC) having a voltage V_(STEP) to Fail-Safe Pin 208 through Resistor RSOURCE. IP2 204 contains Resistor 224 and Capacitor 222 and a Node 210, which has a voltage V_(STEPOUT), between Resistor 224 and Capacitor 222. A second terminal of Capacitor 222 is coupled to ground. IP-3 206 shares Fail-Safe Pin 208 with IP2 204 and in this example, contains a Digital-to-Analog Converter (DAC), the details of which are not shown. IP-3 206 has a power-down mode in which the IP is not active. Applicants have noted that when IP3 206 is in power-down mode, this IP still affects the settling time at Node 210 in IP2 whenever V_(OUT) goes higher than V_(DD). It will be understood that the configuration given in this figure is for illustration only and is not intended as a limitation on the circuits that can use the disclosed modified fail-safe signal.

To understand how this effect occurs, we refer to FIG. 3A, which discloses one example of a fail-safe switch in use. Circuit 300A provides an example section of circuit that may be a part of an IP coupled to the shared Fail-Safe Pin 208. In this example, PMOS Transistor 310 has a source coupled to the upper rail, e.g., V_(DD), while NMOS Transistor 314 has a source coupled to the lower rail, e.g., ground, with a connection to Fail-Safe Pin 208 being provided between the drain of PMOS Transistor 310 and the drain of NMOS Transistor 314. As can be seen in this figure, PMOS Transistor 310 and NMOS Transistor 314 have their respective gates controlled by differential signals V_(IN+) and V_(IN−). Given that the voltage V_(OUT) at Fail-Safe Pin 208 may be greater than the upper rail at times, PMOS Transistor 312 is coupled between the drain of PMOS Transistor 310 and Fail-Safe Pin 208, with the gate of PMOS Transistor 312 being controlled by a signal PKEEP. When the voltage V_(OUT) on Fail-Safe Pin 208 is less than or equal to V_(DD), i.e., the circuit is able to operate normally, PKEEP is equal to the lower rail, e.g., ground. When the voltage V_(OUT) becomes greater than V_(DD), PKEEP is driven to a value equal to V_(OUT), as will be explained below, turning off Transistor 312. In this manner, PMOS Transistor 312 prevents a direct connection of Fail-Safe Pin 208 to the drain of PMOS Transistor 310 when V_(OUT) is greater than V_(DD). Circuit 300A can be placed in a power-down mode by Signal PWDNZ, which is high during normal operation and low when the IP is in power-down mode. Transistor 316 is coupled between the upper rail and the gate of Transistor 310 such that when PWDNZ goes low during power-down, the gate of PMOS Transistor 310 is pulled toward the upper rail, turning off PMOS Transistor 310.

If we assume for a moment that Circuit 300A is part of IP-3, Applicants have noted that the switching of PMOS Transistor 312, when V_(OUT) becomes greater than V_(DD), affects the settling time of voltage V_(STEPOUT) at Node 210 in IP-2 204, even when IP-3 206 is in power-down mode. As noted earlier, it is desirable that when IP-3 is in power-down mode, IP-3 does not affect other IPs that share Fail-Safe Pin 208. One method of managing this issue is shown in FIG. 3B.

Circuit 300B is identical to Circuit 300A except for the addition of PMOS Transistor 318 between the drain of PMOS Transistor 312 and Fail-Safe Pin 208. Signal PWDN, which controls the gate of PMOS Transistor 318, is the inverse of PWDNZ and thus is high whenever the module is in power-down mode. This turns off PMOS Transistor 318 during power-down, isolating Fail-Safe Pin 208 from switching at PMOS Transistor 312 and preventing an effect on settling at Node 210. However, the addition of PMOS Transistor 318 introduces additional problems. PMOS Transistor 318 would need to be large, as the switch size required will be high and the addition of another PMOS Transistor will increase the voltage drop, making the circuit less efficient.

Rather than adding a new switch, at least one embodiment of the disclosure modifies the fail-safe signal PKEEP such that the modified fail-safe signal will be high whenever V_(OUT) is greater than V_(DD) and also when the IP receiving PKEEP is in power-down mode, thus isolating Fail-Safe Pin 208 from the drain of PMOS Transistor 310 during these times. An embodiment that creates a modified PKEEP signal will be discussed, first looking at FIG. 1B, which discloses a circuit for providing a fail-safe signal, and then turning to FIG. 1A, which discloses an embodiment in which the original fail-safe signal is modified to prevent issues during power-off.

In FIG. 1B, Circuit 100B receives voltage rails V_(DD) and V_(SS) and voltage V_(PAD) from Shared Pin 208; Circuit 100B provides two outputs: PKEEP, which is the original fail-safe signal, and NSUB, which as we will see is the greater of the value of V_(PAD) and V_(DD). In the embodiment shown, V_(DD) and V_(SS) are received at Tie-Cell 118. For smaller technologies, e.g., 90 nanometer and smaller, the fixed inputs cannot be implemented by directly connecting the gate inputs to the power rails, as the high voltages and currents received from the rails are able to destroy the gates. Tie-cell 118 can connect additional resistors between the gate inputs and the rails to protect the gates. For purposes of this discussion, the signals Tie_(High) and Tie_(Low), which are output from Tie-Cell 118, are considered equivalent to V_(DD) and V_(SS) respectively; however, it will be understood that the values of Tie_(High) and Tie_(Low) can be adjusted to accommodate smaller technologies or different reference voltages. References in this disclosure to ground, GND, are a reference to the local ground V_(SS).

PMOS Transistor 120, PMOS Transistor 122 and NMOS Transistor 124 are coupled in series between Shared Pin 208, and the lower rail. The gates of PMOS Transistor 120 and NMOS Transistor 124 are each controlled by Tie_(High) and the gate PMOS Transistor 122 is controlled by Tie_(Low). The output PKEEP is taken from a point between the drains of PMOS Transistor 122 and NMOS Transistor 124. PMOS Transistor 126 and PMOS Transistor 128 are also coupled in series between V_(PAD) and V_(DD). The gate of PMOS Transistor 126 is controlled by Tie_(High) and the gate of PMOS Transistor 128 is controlled by the signal, PKEEP. The signal NSUB is taken from a point between PMOS Transistor 126 and PMOS Transistor 128. It can be noted also that the substrates of PMOS Transistors 120 and 122 are coupled to a point between PMOS 126 and PMOS 128 and thus are also connected to NSUB.

The operation of Circuit 100B is as follows. When V_(PAD) is greater than V_(DD), PMOS Transistors 120 and 122 turn on due to their negative gate-source voltage, V_(GS), which pulls Node 125 towards V_(PAD). NMOS Transistor 124 will remain on; however, this transistor has been made weaker than PMOS Transistor 120, such that NMOS Transistor 124 is overpowered when PMOS Transistor 120 is on. PKEEP then has a value of V_(PAD), which turns off PMOS Transistor 128; PMOS Transistor 126 is also on due to its negative V_(GS), so that NSUB has a value of V_(PAD).

When V_(PAD) is less than V_(DD), V_(GS) at PMOS Transistor 120 is positive, so that PMOS Transistor 120 is turned off. NMOS Transistor 124 is on, pulling Node 125 to the lower rail, e.g., GND, giving PKEEP a value of zero. Since V_(PAD) is less than V_(DD), PMOS transistor 126 is off and PMOS transistor 128 is on and NSUB will be equal to V_(DD).

As discussed above, Circuit 100B provides the fail-safe signal PKEEP, which is equal to the voltage V_(PAD) at Fail-Safe Pin 208 whenever V_(PAD) is greater than V_(DD) and is equal to GND when V_(PAD) is less than V_(DD). However, we now want the transistor controlled by PKEEP to also turn off when its circuit is in power-down mode. That is, we would like the modified fail-safe signal PKEEP2 to have the values shown in Table 1.

TABLE 1 Power-Down V_(PAD) Value PKEEP2 PWDN = 0 V_(PAD) < V_(DD) PKEEP2 = GND PWDN = 0 V_(PAD) > V_(DD) PKEEP2 = V_(PAD) PWDN = 1 V_(PAD) < V_(DD) PKEEP2 = V_(DD) PWDN = 1 V_(PAD) > V_(DD) PKEEP2 = V_(PAD)

Referring now to FIG. 1A, Circuit 100A discloses a circuit to provide the desired values for modified fail-safe signal PKEEP2. Circuit 100A receives inputs PKEEP, PWDN, PWDNZ (the inverse of PWDN), and NSUB and provides a modified fail-safe signal PKEEP2. Circuit 100A includes PMOS Transistor 102 coupled in series with NMOS Transistor 104 between Signal PWDNZ and the lower rail. NMOS Transistor 106 is also coupled in series with PMOS Transistor 102 (between Signal PWDNZ and the lower rail) and in parallel with NMOS Transistor 104. The gates of PMOS Transistor 102 and NMOS Transistor 106 are each controlled by PKEEP and the gate of NMOS Transistor 104 is controlled by PWDN. An intermediate signal PWDNZ1 is taken from a point between the drain of PMOS Transistor 102 and the drains of NMOS Transistors 104, 106 and provided to the gates of PMOS Transistor 108 and NMOS Transistor 110, which are coupled in series between signal NSUB and the lower rail. Modified fail-safe signal PKEEP2 is taken from a point between the drains of PMOS Transistor 108 and NMOS Transistor 110. It will be noted that PMOS Transistors 102, 108 have their substrate coupled to NSUB.

The operation of Circuit 100A will now be described. The four possible situations that can determine the value of modified fail-safe signal PKEEP2 are shown in Table 1, so the operation will be described in the order of that table. In a first situation, V_(PAD) is less than V_(DD) and power-down is not active, so PWDN is equal to zero, PWDNZ is equal to one, and PKEEP is equal to the lower rail, which turns on PMOS Transistor 102 and turns off NMOS Transistor 106. PWDN being zero turns off NMOS 104. With both NMOS Transistor 104 and NMOS Transistor 106 turned off and PMOS Transistor 102 turned on, the value of PWDNZ1 is one. PWDNZ1 then turns off PMOS Transistor 108 and turns on NMOS Transistor 110, so that PKEEP2 is equal to the lower rail.

In the second situation, V_(PAD) is greater than V_(DD) and Circuit 200A is not in power down mode. As seen previously, both PKEEP and NSUB are equal to V_(PAD), PWDN is equal to zero and PWDNZ1 is equal to one. At PMOS Transistor 102, the gate-source voltage V_(GS) is positive, so PMOS Transistor 102 is off NMOS Transistor 104 is turned off and NMOS Transistor 106 is turned on, setting PWDNZ1 to GND. PWDNZ1 then turns on PMOS Transistor 108 and turns off NMOS Transistor 110 so that PKEEP2 is equal to NSUB, which in this instance is equal to V_(PAD).

In the third case, V_(PAD) is less than V_(DD) and Circuit 200A is in power down mode. PKEEP is equal to ground, PWDN is equal to one and PWDNZ is equal to zero. PMOS Transistor 102 will not turn on, since the gate-source voltage V_(GS) is zero; NMOS Transistor 106 is turned off but NMOS Transistor 104 turns on, pulling the value of PWDNZ1 to the lower rail, i.e., a value of zero. PWDNZ1 will turn off NMOS Transistor 110 and will turn on PMOS Transistor 108, so that PKEEP2 has a value equal to NSUB. Since V_(PAD) is less than V_(DD), both NSUB and PKEEP2 have a value of V_(DD).

In the fourth case, V_(PAD) is greater than V_(DD) and Circuit 300A is in power-down mode. PKEEP and NSUB are equal to V_(PAD), PWDN is equal to one and PWDNZ1 is equal to zero. PMOS Transistor 102 will not turn on due to a positive V_(GS), NMOS Transistor 104 is on and NMOS Transistor 106 is on, so PWDNZ1 is equal to GND. PWDNZ1 will then turn on PMOS Transistor 108 and turn off NMOS Transistor 110, so that PKEEP2 is set to equal NSUB, which is equal to V_(PAD). The new modified fail-safe signal will thus fulfill the requirements set in Table 1.

The disclosed embodiment provides a low area solution to the problem of fail-safe shared pin settling time issue between different blocks. A large switch, such as the additional switch shown in FIG. 3B, would impact the settling time of output by the parasitic capacitors, but using the disclosed embodiment does not require a large switch and won't significantly impact output settling time of all IPs sharing the same pin.

Although various embodiments have been shown and described in detail, the claims are not limited to any particular embodiment or example. None of the above Detailed Description should be read as implying that any particular component, element, step, act, or function is essential such that it must be included in the scope of the claims. Reference to an element in the singular is not intended to mean “one and only one” unless explicitly so stated, but rather “one or more.” All structural and functional equivalents to the elements of the above-described embodiments that are known to those of ordinary skill in the art are expressly incorporated herein by reference and are intended to be encompassed by the present claims. Accordingly, those skilled in the art will recognize that the exemplary embodiments described herein can be practiced with various modifications and alterations within the spirit and scope of the claims appended below. 

What is claimed is:
 1. A circuit, comprising: a first transistor; a second transistor coupled in series with the first transistor, a first node between the first transistor and the second transistor; a third transistor coupled in parallel with the second transistor; a fourth transistor, a gate of the fourth transistor coupled to the first node; and a fifth transistor, a gate of the fifth transistor coupled to the first node.
 2. The circuit of claim 1, wherein the first transistor is a positive metal oxide semiconductor (PMOS) transistor, the second transistor is a negative metal oxide semiconductor (NMOS) transistor, the third transistor is an NMOS transistor, the fourth transistor is a PMOS transistor, and the fifth transistor is an NMOS transistor.
 3. The circuit of claim 1, wherein a gate of the first transistor is coupled to receive a first fail-safe signal, a gate of the third transistor is coupled to receive the first fail-safe signal, and a second node between the fourth transistor and the fifth transistor is coupled to output a second fail-safe signal.
 4. The circuit of claim 1, wherein a gate of the second transistor is coupled to receive a power-down signal, and the first transistor is coupled to an inverse of the power-down signal.
 5. The circuit of claim 1, wherein a substrate of the first transistor is coupled to a substrate of the fourth transistor.
 6. The circuit of claim 1, further comprising: a sixth transistor coupled to a fail safe pin; a seventh transistor coupled in series with the sixth transistor; an eighth transistor coupled in series with the seventh transistor, a third node between the seventh transistor and the eighth transistor; a ninth transistor coupled to the fail safe pin; and a tenth transistor coupled in series with the ninth transistor, a gate of the tenth transistor coupled to the third node, a fourth node between the ninth transistor and the tenth transistor, and the third node coupled to a gate of the first transistor and a gate of the third transistor.
 7. The circuit of claim 6, further comprising a tie-cell having a tie high output and a tie low output, the tie high output coupled to a gate of the sixth transistor and a gate of the seventh transistor, the tie low output coupled to a gate of the seventh transistor.
 8. The circuit of claim 6, wherein the sixth transistor is a PMOS transistor, the seventh transistor is a PMOS transistor, the ninth transistor is a PMOS transistor, and the tenth transistor is a PMOS transistor, and the eighth transistor is an NMOS transistor.
 9. The circuit of claim 6, the fourth node coupled to a substrate of the fourth transistor, to a substrate of the first transistor, and to a substrate of the fifth transistor.
 10. A method for shared fail-safe, the method comprising: receiving, by a first circuit segment, a first fail-safe signal; receiving, by the first circuit segment, a first power-down signal; providing, by the first circuit segment, an intermediate signal, wherein the first fail-safe signal indicates whether a voltage at a fail-safe pin is greater than an upper rail, and wherein the first power-down signal indicates whether a module is powered down; receiving, by a second circuit segment, the intermediate signal; and providing, by the second circuit segment to the module, a second fail-safe signal.
 11. The method of claim 10, wherein the first circuit segment is coupled between a second power-down signal that is an inverse of the first power-down signal and a lower rail.
 12. The method of claim 11, wherein the second circuit segment is coupled between a high signal that is a higher of the upper rail and the voltage at the fail-safe pin.
 13. The method of claim 12, further comprising: driving a gate of a first PMOS transistor of the first circuit segment based on the first fail-safe signal; driving a gate of a first NMOS transistor of the first circuit segment based on the second power-down signal, the first NMOS transistor coupled in series with the first PMOS transistor; and driving a gate of a second PMOS transistor of the first circuit segment, based on the first fail-safe signal, the second PMOS transistor coupled in parallel with the first NMOS transistor.
 14. The method of claim 13, further comprising: driving a gate of the second PMOS transistor of the second circuit segment, based on the intermediate signal; and driving a gate of a third NMOS transistor of the second circuit segment, based on the intermediate signal, the third NMOS transistor coupled in series with the second PMOS transistor.
 15. The method of claim 14, wherein a body of the first PMOS transistor and a body of the second PMOS transistor are coupled to the high signal.
 16. The method of claim 12, further comprising receiving the high signal from a fourth circuit segment coupled between the fail-safe pin and the upper rail.
 17. The method of claim 11, further comprising receiving the first fail-safe signal from a third circuit segment coupled between the fail-safe pin and the lower rail. 